Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-03-07
2009-12-29
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21094, C257SE21104, C257SE21121, C257S227000, C257S443000, C438S128000, C438S618000
Reexamination Certificate
active
07638371
ABSTRACT:
A method for manufacturing a thin film transistor (“TFT”) array includes providing a substrate, a patterned first metal layer on the substrate including a plurality of first conductive lines and a plurality of second conductive lines disposed orthogonal to the first conductive lines, an insulating layer over the patterned first metal layer, a patterned silicon layer, a patterned passivation layer over the patterned silicon layer, and a patterned doped silicon layer and a patterned second metal layer over the patterned passivation layer, filling exposed portions of the patterned silicon layer and exposed portions of the first conductive lines and the second conductive lines, where the patterned second metal layer includes a plurality of third conductive lines and a plurality of fourth conductive lines, each of which corresponding respectively to one of the plurality of first conductive lines and the plurality of second conductive lines.
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patent: 2003/0148561 (2003-08-01), Nakajima
patent: 2005/0073619 (2005-04-01), Chen et al.
patent: 2005/0253249 (2005-11-01), Chen et al.
Chen Hung-Tse
Chen Yu-Cheng
Alston & Bird LLP
Coleman W. David
Industrial Technology Research Institute
Kim Su C
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