Method for manufacturing thin film transistor

Details Method for manufacturing thin film transistor Method for manufacturing thin film transistor

2005-04-26

2005-04-26

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S154000, C438S166000, C438S486000, C438S487000, C438S759000, C438S795000

Reexamination Certificate

active

06884665

ABSTRACT:
Prior to converting a non-single crystal material of a semiconductor film into a single crystal material through the use of a laser beam, at least one dopant is introduced into whole of the semiconductor film. Then, the non-single crystal semiconductor film is irradiated with a laser beam to crystallize the semiconductor film. In this case, a ratio between quasi-fermi level of the single crystal material within one of transistor formation regions used to form transistors of different conductivity types and quasi-fermi level of the single crystal material within the other thereof is made to be between 0.5:1 and 2.0:1. Thus, transistors of different conductivity types are formed in the crystallized semiconductor film.

REFERENCES:
patent: 5808321 (1998-09-01), Mitanaga et al.
patent: 6165876 (2000-12-01), Yamazaki et al.
patent: 6207969 (2001-03-01), Yamazaki
patent: 6512271 (2003-01-01), Yamazaki et al.
patent: 20030166315 (2003-09-01), Tanada et al.

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