Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-04-26
2011-04-26
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S150000, C438S161000, C438S162000, C438S163000, C438S164000, C438S165000, C438S166000
Reexamination Certificate
active
07932138
ABSTRACT:
A method for manufacturing a thin film transistor with improved current characteristics and high electron mobility. According to the method, when an amorphous silicon thin film is crystallized into a polycrystalline silicon thin film by metal-induced crystallization, annealing conditions of the amorphous silicon thin film and the amount of a metal catalyst doped into the amorphous silicon thin film are optimized to reduce the regions of a metal silicide distributed at grain boundaries of the polycrystalline silicon thin film. In addition, oxygen (O2) gas or water (H2O) vapor is supplied to form a passivation film on the surface of the polycrystalline silicon thin film.
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Kim Hoon
Kim Hyoung June
Lee Jung Min
Lee Su Kyoung
Park Wang Jun
Au Bac H
IpHorgan Ltd.
Picardat Kevin M
Viatron Technologies Inc.
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