Method for manufacturing thin film transistor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C257SE21051, C257SE21370, C257SE21400, C257SE21654, C438S609000

Reexamination Certificate

active

08084307

ABSTRACT:
A method for manufacturing a thin film transistor containing an channel layer11having indium oxide, including forming an indium oxide film as an channel layer and subjecting the formed indium oxide film to an annealing in an oxidizing atmosphere.

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