Method for manufacturing thin film transistor

Details Method for manufacturing thin film transistor Method for manufacturing thin film transistor

2006-10-12

2008-11-04

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S157000, C438S158000, C438S197000, C257SE21415, C257SE29137, C257SE29147

Reexamination Certificate

active

07445970

ABSTRACT:
An exemplary photomask (150) has a slit. The slit has at least one turning region (D1) and at least one other regions, and the slit at the at least one turning region has a narrower width than the slit at the at least one other regions. An exemplary method for manufacturing a thin film transistor (TFT) using the photomask is also provided.

REFERENCES:
patent: 5015597 (1991-05-01), Vinouze et al.
patent: 5700606 (1997-12-01), Kobayashi et al.
patent: 7161212 (2007-01-01), Ohishi et al.
patent: 2005/0041169 (2005-02-01), Hashimoto et al.
patent: 2005/0059190 (2005-03-01), Lee et al.
patent: 2005/0074682 (2005-04-01), Noda et al.

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