Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-02-28
1998-09-22
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438286, 438302, H01L 2184, H01L 21336
Patent
active
058113240
ABSTRACT:
A thin film transistor includes a first active layer formed on a substrate; a gate electrode formed on a center portion of the first active layer and having a lower side connected to the center portion of the first active layer; a second active layer electrically connected to the first active layer and formed on lateral sides and on an upper side of the gate electrode; and impurity regions formed at opposing lateral sides of the gate electrode. A method of manufacturing a thin film transistor includes the steps of forming a patterned layer on a substrate; forming a gate electrode which crosses the patterned layer; removing the patterned layer; forming a gate insulating film on a surface of the gate electrode including a portion of the gate electrode from which the patterned layer has been removed; forming an active layer which crosses the portion of the gate electrode from which the patterned layer has been removed and an upper portion of the gate electrode; and forming impurity regions at opposing lateral sides of the gate electrode.
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S. Maegawa et al., "A 0.4 m Gate-All-Around TFT(GAT) Using a Dummy Nitride Pattern for High Density Memories", Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, pp. 907-909 (1994).
K. Hamada et al., "Improvement of Poly-Si TFT Characteristics by Hydrogenation at SiO.sub.2 /Poly-Si Interfaces, Characterized by TDS Measurement of Deuterium Terminated Poly-Si", Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, pp. 470-472 (1994).
Booth Richard A.
LG Semicon Co. Ltd.
Niebling John
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