Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-09
2006-05-09
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S421000, C438S611000
Reexamination Certificate
active
07041593
ABSTRACT:
A main object of the present invention is to provide a manufacturing method of a thin-film structural body removing a sacrifice film without removing other insulating films.In order to achieve the above-mentioned object, upon forming an anchor hole (52) which forms an opening on the surface of a wiring (45), two etching steps are employed on a sacrifice film (51). In the first etching step, the sacrifice film (51) is partially removed by a dry etching process with an anisotropy above a wiring (45) with the sacrifice film (51) being left. In the second etching step, the remaining sacrifice film (51) above the wiring (45) is removed by a wet etching process with an isotropic.
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Horikawa Makio
Ishibashi Kiyoshi
Okumura Mika
Everhart Caridad
Mitsubishi Denki & Kabushiki Kaisha
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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