Method for manufacturing thin film semiconductor

Details Method for manufacturing thin film semiconductor Method for manufacturing thin film semiconductor

2008-06-06

2009-10-06

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S307000, C438S378000, C438S795000, C438S799000

Reexamination Certificate

active

07598160

ABSTRACT:
A method for manufacturing thin film semiconductor device is provided. The semiconductor thin film includes a semiconductor thin film and a gate electrode and has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

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Yamaguchi et al., “Modeling and characterization of polycrystalline-silicon thin-film transistors with a channel-length comparable to a grain size,” Journal of Applied Physics, vol. 89, pp. 590-595, 2001.
Kimura et al., “Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors,” Jpn. J. Appl. Phys. vol. 40, Part I, No. 9A, Sep. 2001, pp. 5227-5236.
Kimura et al., “Device Simulation of Carrier Transport through Grain Boundaries in Lightly Doped Polysilicon Films and Dependence on Dopant Density,” Jpn. J. Appl. Phys. vol. 40, Part I, No. 9A, Sep. 2001, pp. 5237-5243.

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