Electric lamp or space discharge component or device manufacturi – Process – Generating gas or vapor within an envelope – or coating by...
Patent
1994-06-07
1996-05-21
Bradley, P. Austin
Electric lamp or space discharge component or device manufacturi
Process
Generating gas or vapor within an envelope, or coating by...
445 24, 445 58, 20419226, H01J 922
Patent
active
055184324
ABSTRACT:
A method for manufacturing a thin-film EL device utilizes a Zn-Mn target that contains less Mn than the optimum Mn concentration on the basis of the finding that the light-emitting layer grown by the sputtering method contains more Mn than in the target. Manganese concentration on the target surface layer is controlled by changing the area ratio between ZnS and Mn exposed on the surface of the target. Manganese concentration on the target surface is controlled at preferably from 0.3 to 0.4 wt % when the target surface is sulfurized during sputtering and less than 0.1 wt % when the target surface is not sulfurized.
REFERENCES:
patent: 3803438 (1974-04-01), Hanak
patent: 4675092 (1987-06-01), Baird et al.
Rawlins et al., "Sputtered Zinc Sulphide Films . . . " J. Matls. Sci., vol. 7, No. 3 (1972) 257-264.
Hanak, "Electroluminescence In ZmS: Mn.sub.x : Cu.sub.y. . ." Proc. 6th Internl. Vacuum Congr. 1974; Japan. J. Appl. Phys. Suppl. 2, Pt. 1, 1974.
Katou Hisato
Kawashima Tomoyuki
Nakamata Shin'ichi
Shibata Kazuyoshi
Taniguchi Harutaka
Bradley P. Austin
Fuji Electric Company Ltd.
Knapp Jeffrey T.
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