Method for manufacturing thin film device and semiconductor...

Details Method for manufacturing thin film device and semiconductor... Method for manufacturing thin film device and semiconductor...

2006-09-28

2009-06-23

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S106000, C438S118000, C257SE21411, C257SE21499

Reexamination Certificate

active

07550326

ABSTRACT:
The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate (106) to a thin film device layer (103) provided on a protective layer (102) formed on a first substrate (101) through a first adhesive layer (105), then, completely or partly removing the first substrate (101) in accordance with a process including at least one process of a chemical process and a mechanical polishing process, bonding a third substrate (109) to the exposed protective layer (102) or the protective layer (102) covered with the partly removed first substrate (101) through a second adhesive layer (108) and separating or removing the second substrate (106). Thus, the thin film device suitable for a light and thin display panel is manufactured without deteriorating a ruggedness.

REFERENCES:
patent: 5206749 (1993-04-01), Zavracky et al.
patent: 5339180 (1994-08-01), Katoh
patent: 5672240 (1997-09-01), Stoner et al.
patent: 6700631 (2004-03-01), Inoue et al.
patent: 05-226312 (1993-09-01), None
patent: 06-118441 (1994-04-01), None
patent: 06-504139 (1994-12-01), None
patent: 09-116158 (1997-05-01), None
patent: 11-212116 (1999-08-01), None
patent: 99-44242 (1999-09-01), None
A Japanese Office Action dated Nov. 25, 2008 issued in connection with counterpart Japanese Patent Application No. 2002-581584.

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