Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Patent
1997-01-13
1999-07-27
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
H01L 2120, H01L 2136
Patent
active
059279940
ABSTRACT:
A method of manufacturing thin films by plasma CVD is described. This method comprises supplying power to a power electrode in a way such that a self-bias upon plasma discharge of the power applying electrode, which is situated in a plasma discharge space, is a positive potential relative to a ground electrode.
REFERENCES:
patent: 4400409 (1983-08-01), Izu et al.
patent: 4690746 (1987-09-01), McInerny et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 5102523 (1992-04-01), Beiswenger et al.
patent: 5763937 (1997-07-01), Jain et al.
Hori Tadashi
Kanai Masahiro
Kohda Yuzo
Nishimoto Tomonori
Okabe Shotaro
Bowers Charles
Canon Kabushiki Kaisha
Thompson Craig
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