Method for manufacturing T-gate

Details Method for manufacturing T-gate Method for manufacturing T-gate

1996-12-17

1999-07-27

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438572, 438574, 438579, H01L 21338, H01L 2128, H01L 2144

Patent

active

059306106

ABSTRACT:
Method for manufacturing a T-gate useful for reducing a gate resistance, improving through-put, and simplifying an MMIC (monolithic microwave integrated circuit) process is disclosed, the method including the steps of depositing a first photoresist layer on a semiconductor substrate and patterning the first photoresist layer so as to expose a predetermined portion of the surface of the substrate; successively forming a seed metal layer and a second photoresist layer on the entire surface inclusive of the exposed substrate and patterning the second photoresist layer so as to define a gate electrode region; plating Au on the seed metal layer on the gate electrode region so as to form a gate electrode; and removing the first and second photoresist layers and the seed metal layer except the gate electrode.

REFERENCES:
patent: 4337115 (1982-06-01), Ikeda et al.
patent: 5288660 (1994-02-01), Hua et al.
patent: 5856232 (1999-01-01), Yang et al.

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