Method for manufacturing strained silicon

Details Method for manufacturing strained silicon Method for manufacturing strained silicon

2004-12-30

2008-08-12

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257SE21090

Reexamination Certificate

active

07410888

ABSTRACT:
In accordance with a particular embodiment of the present invention, a method for manufacturing strained silicon is provided. In one embodiment, the method for manufacturing strained silicon includes inducing a curvature in a silicon wafer, depositing an epitaxial layer of silicon upon an upper surface of the silicon water while the silicon wafer is under the induced curvature, and releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.

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