Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-02
2010-06-08
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257SE21568, C438S800000, C438S967000
Reexamination Certificate
active
07732867
ABSTRACT:
Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate10to form the hydrogen ion implanted layer (ion-implanted damage layer)11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary12is formed. The single crystal Si substrate10is bonded to the quartz substrate20having a carbon concentration of 100 ppm or higher, and an external shock is applied near the ion-implanted damage layer11to delaminate the Si crystal film along the hydrogen ion implanted boundary12of the single crystal Si substrate10out of the bonded substrate. Then, the surface of the resultant silicon thin film13is polished to remove a damaged portion, so that an SOQ substrate can be fabricated. There can be provided an SOQ substrate highly adaptable to a semiconductor device manufacturing process.
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Akiyama Shoji
Ito Atsuo
Kawai Makoto
Kubota Yoshihiro
Tanaka Koichi
Novacek Christy L
Oliff & Berridg,e PLC
Shin-Etsu Chemical Co. , Ltd.
Smith Zandra
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