Method for manufacturing SOI wafer

Details Method for manufacturing SOI wafer Method for manufacturing SOI wafer

2005-11-30

2009-11-10

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C257SE21568, C257SE21570

Reexamination Certificate

active

07615467

ABSTRACT:
This method for manufacturing an SOI wafer includes: a step of subjecting a mirror-polished active layer wafer to a rapid thermal annealing treatment; a step of forming insulating films in a front surface and a rear surface of the active layer wafer; a step of bonding the active layer wafer and a support wafer with the insulating film therebetween so as to form a bonded wafer; a step of loading the bonded wafer on a wafer boat in a state such that a portion of the active layer wafer is in contact with the wafer boat, and then subjecting the bonded wafer to a heat treatment for bonding enhancement which enhances a bonding strength between the active layer wafer and the support wafer in the bonded wafer; and a step of thinning a portion of the active layer wafer.

REFERENCES:
patent: 6180220 (2001-01-01), Falster et al.
patent: 2003/0013273 (2003-01-01), Naruoka et al.
patent: 2004/0053516 (2004-03-01), Nakada et al.
patent: 2000-031439 (2000-01-01), None
patent: 2001-44398 (2001-02-01), None

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