Method for manufacturing SOI substrate using cluster ion

Details Method for manufacturing SOI substrate using cluster ion Method for manufacturing SOI substrate using cluster ion

2011-08-02

2011-08-02

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S458000, C257SE21567

Reexamination Certificate

active

07989305

ABSTRACT:
A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation of a surface of a semiconductor wafer with cluster ions to form a separation layer in the semiconductor wafer. The semiconductor wafer and a substrate having an insulating surface are then overlapped with each other and bonded, which is followed by thermal treatment to separate the semiconductor wafer at or around the separation layer. A separation wafer and an SOI substrate which has a crystalline semiconductor layer over the substrate having the insulating surface are simultaneously obtained by the process A. The process B includes treatment of the separation wafer for reusing, which allows the separation wafer to be successively subjected to the process A.

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