Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Reexamination Certificate
2005-12-20
2005-12-20
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
C438S149000, C438S151000, C438S297000, C438S400000, C438S525000
Reexamination Certificate
active
06977205
ABSTRACT:
This invention provides a semiconductor device with an element isolation implemented by a method of manufacturing a semiconductor device comprising the steps of: forming a pad oxide film140and a nitride film150sequentially on a silicon layer130in an element region S; forming a metal oxide film180for generating a fixed electric charge on the nitride film150and on the silicon layer130in an element isolation region A; forming a field oxide film160in the element isolation region A by implementing an oxidation treatment; and removing the metal oxide film180on the nitride film150,the nitride film150and the pad oxide film140.In the semiconductor device, the threshold voltage of a parasitic transistor is made high and prevented from turning on, and the influence of leak current is reduced and the hump characteristic of element is restrained.
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Doty Heather
Oki Electric Industry Co. Ltd.
Rabin & Berdo PC
Thompson Craig A.
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