Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2006-11-21
2006-11-21
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C029S025350
Reexamination Certificate
active
07138288
ABSTRACT:
A crystal resonator area and side electrode shielding/formation blocks thereabout are formed on a crystal substrate through etching with both areas kept separate from each other with a gap. Vapor deposition is diagonally applied through this gap toward the side of the crystal substrate to thereby form an electrode film divided into two portions in the thickness direction of the substrate on the side.
REFERENCES:
patent: RE32931 (1989-05-01), Staudte
patent: 5420548 (1995-05-01), Nakajima
patent: 5912524 (1999-06-01), Ohnishi et al.
patent: 05-315881 (1993-11-01), None
patent: 6-44234 (1994-06-01), None
patent: 08-018371 (1996-01-01), None
patent: 10-170272 (1998-06-01), None
Shioji Akihiro
Yanagisawa Tohru
Citizen Watch Co. Ltd.
Smith , Gambrell & Russell, LLP
Smoot Stephen W.
LandOfFree
Method for manufacturing small crystal resonator does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing small crystal resonator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing small crystal resonator will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3663538