Method for manufacturing small crystal resonator

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C029S025350

Reexamination Certificate

active

07138288

ABSTRACT:
A crystal resonator area and side electrode shielding/formation blocks thereabout are formed on a crystal substrate through etching with both areas kept separate from each other with a gap. Vapor deposition is diagonally applied through this gap toward the side of the crystal substrate to thereby form an electrode film divided into two portions in the thickness direction of the substrate on the side.

REFERENCES:
patent: RE32931 (1989-05-01), Staudte
patent: 5420548 (1995-05-01), Nakajima
patent: 5912524 (1999-06-01), Ohnishi et al.
patent: 05-315881 (1993-11-01), None
patent: 6-44234 (1994-06-01), None
patent: 08-018371 (1996-01-01), None
patent: 10-170272 (1998-06-01), None

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