Method for manufacturing single crystal semiconductor

Details Method for manufacturing single crystal semiconductor Method for manufacturing single crystal semiconductor

2008-05-20

2008-05-20

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S032000, C117S217000, C117S218000, C117S917000

Reexamination Certificate

active

07374614

ABSTRACT:
The method for manufacturing a single crystal semiconductor achieves an object to reduce the impurity concentration nonuniformity within a semiconductor wafer plane and thus to improve the wafer planarity by introducing an impurity into the single crystal semiconductor more uniformly during the pulling of the single crystal semiconductor from a melt. In the course of pulling the single crystal semiconductor (6), the rotating velocity (ω2) of the single crystal semiconductor (6) being pulled is adjusted to a predetermined value or higher, and a magnetic field having a strength in a predetermined range is applied to the melt (5). Particularly, the crystal peripheral velocity is adjusted to 0.126 m/sec or higher, and M/V1/3is adjusted to 35.5≦M/V1/3≦61.3. More desirably, the crystal peripheral velocity is adjusted to 0.141 m/sec or higher, and M/V1/3is adjusted to 40.3≦M/V1/3≦56.4.

REFERENCES:
patent: 5306387 (1994-04-01), Fusegawa et al.
patent: 5976246 (1999-11-01), Iino et al.
patent: 2003/0154906 (2003-08-01), Weber et al.
patent: 60-033289 (1985-02-01), None
patent: 60-033291 (1985-02-01), None
patent: 62-260795 (1987-11-01), None
patent: 04-055388 (1992-02-01), None
patent: 07-061893 (1995-03-01), None
patent: 09-263493 (1997-10-01), None
patent: 11-116390 (1999-04-01), None
patent: 2003-246695 (2003-09-01), None

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