Method for manufacturing SIMOX wafer

Details Method for manufacturing SIMOX wafer Method for manufacturing SIMOX wafer

2007-02-21

2010-06-01

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S174000, C438S175000, C438S527000, C257SE21135, C257SE21315, C257SE21563

Reexamination Certificate

active

07727867

ABSTRACT:
A MLD-SIMOX wafer is obtained by forming a first ion-implanted layer in a silicon wafer; forming a second ion-implanted layer that is in an amorphous state; and subjecting the wafer to a high-temperature heat treatment to maintain the wafer in an atmosphere containing oxygen at a temperature that is not lower than 1300° C. but lower than a silicon melting point to change the first and the second ion-implanted layers into a BOX layer, wherein the dose amount for the first ion-implanted layer is 1.25 to 1.5×1017atoms/cm2, the dose amount for the second ion-implanted layer is 1.0×1014to 1×1016atoms/cm2, the wafer is preheated to a temperature of 50° C. to 200° C. before forming the second ion-implanted layer, and the second ion-implanted layer is formed in a state where it is continuously heated to a preheating temperature.

REFERENCES:
patent: 5930643 (1999-07-01), Sadana et al.
patent: 2002/0098713 (2002-07-01), Henley et al.
patent: 2003/0087504 (2003-05-01), Erokhin et al.
patent: 2003/0211711 (2003-11-01), Seki et al.
patent: 2004/0013886 (2004-01-01), Fox et al.
patent: 2004/0241955 (2004-12-01), Doris et al.
patent: 2005/0170570 (2005-08-01), DeSouza et al.
patent: 07-263538 (1995-10-01), None
English language Translation of JP 07-263538, Oct. 13, 1995.

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