Method for manufacturing silicon wafer and silicon wafer

Details Method for manufacturing silicon wafer and silicon wafer Method for manufacturing silicon wafer and silicon wafer

2006-07-18

2006-07-18

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Reexamination Certificate

active

07078357

ABSTRACT:
There are provided a heat-treating method capable of both increasing BMD density and widening DZ layer width, and a silicon wafer having DZ layer width wider compared with a conventional one regardless of high BMD density. In the method, heat treatment (RTA treatment) is performed to a silicon wafer containing interstitial oxygen with a rapid heating-rapid cooling apparatus, thereby atomic vacancies being injected from a surface of the wafer to form a maximum position of an atomic vacancy concentration in a depth direction in the vicinity of the surface of the wafer, and thereafter heat treatment (post annealing) is performed to move the maximum position of the atomic vacancy concentration in the vicinity of the surface of the wafer into the inside of the wafer.

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