Method for manufacturing silicon thin film conductive element

Details Method for manufacturing silicon thin film conductive element Method for manufacturing silicon thin film conductive element

1997-09-02

2000-03-21

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438482, 438507, 438508, 438509, 438565, H01L 2122

Patent

active

060402369

ABSTRACT:
In a silicon conductor doped with an impurity of 100 nm or less thick, a method is provided for manufacturing a silicon thin film conductive element which can prevent the increase of resistance with a low impurity concentration. The method includes the step in which, after the formation of an impurity-containing amorphous silicon film, a crystallization is performed without removing the film from a film forming device by performing a heat treatment while flowing a gas containing the impurity.

REFERENCES:
patent: 5639685 (1997-06-01), Zahurak et al.
patent: 5714415 (1998-02-01), Oguro
Japanese Patent Office Action with corresponding application 8-236020/1996 with the pertinent information written thereon.

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