Method for manufacturing silicon on sapphire wafer

Details Method for manufacturing silicon on sapphire wafer Method for manufacturing silicon on sapphire wafer

2011-08-02

2011-08-02

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S517000, C438S791000, C257S352000, C257S635000, C257S640000, C257SE21416, C257SE23016

Reexamination Certificate

active

07989324

ABSTRACT:
The present invention provides an SOS wafer comprising a non-transparent polysilicon layer provided on a back surface of a sapphire substrate, a silicon nitride layer which protects the polysilicon layer, and a stress relaxing film which cancels stress produced in the silicon nitride layer, wherein the silicon nitride layer and the stress relaxing film are provided on the back surface side.

REFERENCES:
patent: 5877094 (1999-03-01), Egley et al.
patent: 5985771 (1999-11-01), Moore et al.
patent: 6238935 (2001-05-01), Egley et al.
patent: 2004/0092051 (2004-05-01), Currie et al.
patent: 57-153445 (1982-09-01), None
patent: 2000-36585 (2000-02-01), None
patent: 3083725 (2000-06-01), None

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