Method for manufacturing silicon-on-insulator wafer

Details Method for manufacturing silicon-on-insulator wafer Method for manufacturing silicon-on-insulator wafer

2007-08-07

2007-08-07

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S475000, C257SE21008, C257S032000, C257S311000, C257S319000

Reexamination Certificate

active

11101870

ABSTRACT:
A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the furnace maintained at a temperature of 250° C. to 800° C. to transfer the SOI wafer to an atmosphere containing hydrogen or water. The steps are performed in that order.

REFERENCES:
patent: 5877070 (1999-03-01), Goesele et al.
patent: 6150239 (2000-11-01), Goesele et al.
patent: 6159829 (2000-12-01), Warren et al.
patent: 6593211 (2003-07-01), Sato
patent: 7052948 (2006-05-01), Murphy et al.

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