Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1998-08-21
2000-03-14
Bowers, Charles
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438398, 438255, 438947, H01L 21425
Patent
active
060372435
ABSTRACT:
This invention relates to a method for manufacturing silicon nitride films on a silicon substrate through chemical reaction of a surface, and then manufacturing a silicon nanometer structure using the silicon nitride films under ultra high vacuum condition. A method for manufacturing silicon nano structures using silicon nitride film, includes the following steps: performing a cleaning process of the silicon surface and implanting nitrogen ions having low energy into the silicon substrate; performing first heat treatment of the silicon substrate having ions implanted therin, and cooling the silicon substrate to room temperature to form monolayer thick silicon nitride islands; implanting oxygen gas on the silicon surface on which silicon nitride islands are used as masks while maintaining the surface of the silicon substrate at a temperature of 750 to 800.degree. C. and forming silicon nano pillars by etching silicon portions selectively; and removing the silicon nitride islands by implanting reactive ions having energy of 100 to 200 eV on the surface of silicon nano pillars and performing second heat treatment at the temperature of 800 to 900.degree. C.
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patent: 5960295 (1999-09-01), Jen et al.
A. Nakajima et al., Isolated Nanometer-size Si Dot Arrays Fabricated Using Electron-Beam Lithography, Reactive Ion Etching, and Wet Etching in NH.sub.4 OH/H.sub.2 O.sub.2 /H.sub.2 O, Dec. 15, 1994 pp. L 1796-L1798.
Perkins et al., Fabrication of nm wide trenches in si by vacuum scanning tunneling microscope lithography of an organosilane self-assembled film and reactive ion etching, Jan. 22, 1996, pp. 550-552.
Ha Jeong Sook
Park Kang Ho
Bowers Charles
Electronics and Telecommunications Research Institute
Yevsikov Victor
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