Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2007-05-22
2007-05-22
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
C438S586000, C438S597000, C438S630000, C438S649000, C438S655000, C438S658000, C438S660000, C438S664000, C438S682000, C257SE21165, C257SE21438
Reexamination Certificate
active
10751172
ABSTRACT:
The present invention is directed to a method of manufacturing silicide used to reduce a contact resistance at a contact of a semiconductor device and a semiconductor device with the silicide manufactured by the same method. The method comprises the steps of: (a) cleaning a semiconductor substrate with a transistor formed thereon, the transistor including a source electrode, a drain electrode and a gate electrode; (b) placing the cleaned semiconductor substrate into a sputter chamber in a deposition equipment, and forming silicide at the same time of depositing a metal film under a state where the semiconductor substrate is heated at a temperature of 450-600° C.; (c) removing residual metal film not used for the formation of silicide; and (d) annealing the semiconductor substrate. According to the present invention, since silicide is formed at the same time of depositing a cobalt film, there is an advantage of omission of a protection film formation process over the prior arts where silicide is formed by a post-heat treatment.
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Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Lee Kyoung
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