Method for manufacturing shallow trench isolation structure

Details Method for manufacturing shallow trench isolation structure Method for manufacturing shallow trench isolation structure

1998-11-09

2000-07-11

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438745, 438756, H01L 2100

Patent

active

060872624

ABSTRACT:
A method for manufacturing shallow trench isolation structure includes the steps of fabricating a self-aligned silicon nitride mask over the trench region so that a kink effect due to the misalignment of mask during a conventional mask-making process can be avoided. Moreover, the silicon nitride mask requires fewer steps and less complicated operations to construct than a conventional reverse tone mask.

REFERENCES:
patent: 5494857 (1996-02-01), Cooperman et al.
patent: 5721172 (1998-02-01), Jang et al.

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