Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Patent
1997-05-28
1999-08-31
Trinh, Michael
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
438 52, 7351421, 257419, H01L 2100
Patent
active
059465492
ABSTRACT:
A method for manufacturing sensors using semiconductors that is optimal for obtaining compact sensors is described. The method includes the steps of (a) applying an n-type silicon layer to the upper surface of a silicon substrate, (b) applying a p-type silicon layer on either the upper surface of the n-type silicon layer or the upper surface of a base, (c) removing part of the p-type silicon layer by electrochemical etching, (d) joining the base with the p-type silicon layer applied to the n-type silicon layer or joining the n-type silicon layer with the p-type silicon layer applied to the base, (e) removing the silicon substrate and exposing the upper surface of the n-type silicon layer, and (f) forming a strain gage in a section of the upper surface of the silicon substrate so that a portion of the n-type silicon layer facing the upper surface of the base functions as a diaphragm.
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Itoigawa Koichi
Iwata Hitoshi
Kabushiki Kaisha Tokai Rika Denki Seisakusho
Trinh Michael
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