Method for manufacturing semiconductor thin film, and...

Details Method for manufacturing semiconductor thin film, and... Method for manufacturing semiconductor thin film, and...

2005-05-17

2005-05-17

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S478000, C438S483000, C438S761000

Reexamination Certificate

active

06893946

ABSTRACT:
A method for manufacturing a semiconductor thin film having high carrier mobility, and a magnetoelectric conversion element provided with the semiconductor thin film manufactured by the aforementioned method are provided. The temperature of the Si single crystal substrate is raised to 270° C. to 320° C., and an In buffer layer is formed by an electron beam heating type vacuum evaporation method. Subsequently, an initial seed layer made of Sb and In is formed. The temperature of the Si single crystal substrate is raised to 460° C. to 480° C., and thereafter, a retention time approximated by a predetermined function of the temperature of the Si single crystal substrate is provided. Then, a main growth layer made of Sb and In is formed.

REFERENCES:
patent: 4443488 (1984-04-01), Little et al.
patent: 5605860 (1997-02-01), Kawasaki et al.
patent: 5854116 (1998-12-01), Ohmi et al.
patent: 6224713 (2001-05-01), Hembree et al.
patent: 1098559 (1995-02-01), None
patent: AG 7-249577 (1995-09-01), None
Bunshah, “Deposition Technologies for Films and Coatings,” Chapter 4, p. 102, Noyes Publications, New York, 1982.

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