Method for manufacturing semiconductor substrate

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

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Details

C257SE21054, C257SE21561, C257SE21568, C438S459000, C438S603000, C438S769000, C438S787000, C438S931000

Reexamination Certificate

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08043937

ABSTRACT:
It is an object to provide a novel manufacturing method of a semiconductor substrate containing silicon carbide. The method for manufacturing a semiconductor device includes the steps of performing carbonization treatment on a surface of a silicon substrate to form a silicon carbide layer; adding ions to the silicon substrate to form an embrittlement region in the silicon substrate; bonding the silicon substrate and a base substrate with insulating layers interposed between the silicon substrate and the base substrate; heating the silicon substrate and separating the silicon substrate at the embrittlement region to form a stacked layer of the silicon carbide layer and a silicon layer over the base substrate with the insulating layers interposed between the base substrate and the stacked layer; and removing the silicon layer to expose a surface of the silicon carbide layer.

REFERENCES:
patent: 4983538 (1991-01-01), Gotou
patent: 5667586 (1997-09-01), Ek et al.
patent: 5759908 (1998-06-01), Steckl et al.
patent: 6391799 (2002-05-01), Di Cioccio
patent: 2008/0246109 (2008-10-01), Ohnuma et al.
patent: 62-066000 (1987-03-01), None
patent: 01-135070 (1989-05-01), None
patent: 02-048495 (1990-02-01), None

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