Method for manufacturing semiconductor substrate

Details Method for manufacturing semiconductor substrate Method for manufacturing semiconductor substrate

2007-05-22

2007-05-22

Pham, Thanhha S. (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S412000

Reexamination Certificate

active

10716606

ABSTRACT:
An epitaxial layer is formed on a high-resistance semiconductor substrate containing interstitial oxygen at a high concentration, and then a heat treatment is performed to the semiconductor substrate at a high temperature in an oxidizing atmosphere. Accordingly, a stratiform region of SiO2is formed by deposition at an interface between the epitaxial layer and the semiconductor substrate. As a result, an apparent SOI substrate for an SOI semiconductor device can be manufactured at a low cost.

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Communication from European Patent Office dated Jun. 17, 2005.
Examination Report from European Patent Office issue on Sep. 14, 2006 for the corresponding European patent application No. 00 125 154.5-1528 (a copy and English translation thereof).

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