Method for manufacturing semiconductor power device

Details Method for manufacturing semiconductor power device Method for manufacturing semiconductor power device

2006-12-12

2006-12-12

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S464000, C438S690000

Reexamination Certificate

active

07148125

ABSTRACT:
A semiconductor device, which has a relatively low ON resistance, is manufactured using the following steps. First, a semiconductor wafer that includes a semiconductor layer and a semiconductor element layer, which is located on the semiconductor layer, is formed. Then, the wafer is ground evenly to a predetermined thickness from the side where the semiconductor layer is located. Next, the wafer is etched to a predetermined thickness from the side where the semiconductor layer is located while the periphery of the wafer is masked against the etchant to form a rim at the periphery. The wafer is reinforced by the rim at the periphery, so even if the wafer is relatively large, the wafer is prevented from breaking or warping at the later steps after the wafer is thinned by etching.

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