Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-05-01
2007-05-01
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S031000, C359S321000, C359S324000, C257SE21127
Reexamination Certificate
active
10498974
ABSTRACT:
A method for manufacturing a semiconductor module incorporated with an optical isolator making use of a Faraday rotator formed of a magnetic garnet film in which a magnetically saturated condition is maintained even without any external magnetic field, in which, at the time the magnetic garnet film is exposed to a temperature of 100° C. or more in a step during manufacture, an external magnetic field is applied in the same direction as the direction of magnetization of this magnetic garnet film. This manufacturing method has an advantage that the high-coercivity film magnetic garnet film is not removed from its magnetically saturated condition even when heating steps are present in the course of manufacture.
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V.J. Fratello, et al.; “Innovative Improvements in Bismuth-Doped Rare-Earth Iron Garnet Faraday Rotators”;IEEE Transactions on Magnetics; vol. 32; No. 5; Sep. 1996; pp. 4102-4107./Cited in the International Search Report.
Kanaizuka Tadahito
Kawazoe Takemi
Yoshimura Ko
Armstrong Kratz Quintos Hanson & Brooks, LLP
Brewster William M.
Sumitomo Metal & Mining Co., Ltd.
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