Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-23
2010-02-02
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S500000, C257S411000, C257S406000, C257SE21675
Reexamination Certificate
active
07655993
ABSTRACT:
In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.
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Fig. 4(e) of JP No. 2001-284463 with indication in English.
Fig. 2(f) of JP No. 2001-298095 with indication in English.
Furukawa Ryoichi
Sakai Satoshi
Yamamoto Satoshi
Antonelli, Terry Stout & Kraus, LLP.
Lee Eugene
Renesas Technology Corporation
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