Method for manufacturing semiconductor integrated circuit...

Details Method for manufacturing semiconductor integrated circuit... Method for manufacturing semiconductor integrated circuit...

2011-05-17

2011-05-17

Culbert, Roberts (Department: 1716)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

C216S024000, C438S689000

Reexamination Certificate

active

07943054

ABSTRACT:
Cracks are generated in a resist film part used to form an opening part in a photoreceptor part, whereby etching is performed as far as the inter-layer insulating film in unintended portions. In order to prevent this, the resist pattern used as an etching mask is formed in a shape that disperses the stress. The stress is generated because the resist is hardened by post baking after having been exposed and developed. In order to disperse the stress, the opening part of the resist pattern is formed in a planar shape that has no corners.

REFERENCES:
patent: 7427530 (2008-09-01), Bae et al.
patent: 2008/0001242 (2008-01-01), Yamada
patent: 1624936 (2005-06-01), None
patent: A-2001-060713 (2001-03-01), None
patent: A-2004-153032 (2004-05-01), None
patent: A-2005-43793 (2005-02-01), None

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