Method for manufacturing semiconductor devices having dual damas

Details Method for manufacturing semiconductor devices having dual damas Method for manufacturing semiconductor devices having dual damas

1998-10-26

2000-12-26

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438623, 438725, H01L 214763

Patent

active

061658995

ABSTRACT:
A first insulating film is formed on a semiconductor substrate. On the first insulating film, a first photoresist is then formed. A pattern for contact hole is formed in the first photoresist. Thereafter, the first insulating film is etched by using the first photoresist as a mask, and thereby a contact hole is formed. The first photoresist is then removed, and an organic insulating film is formed on a whole surface. In addition, a second insulating film is formed on the organic insulating film. Subsequently, a second photoresist is formed on the second insulating film. A pattern for wiring trench is formed in the second photoresist. Thereafter, the second insulating film is etched by using the second photoresist as a mask. Subsequently, the organic insulating film is etched by using the second insulating film as a mask, and thereby a wiring trench is formed.

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5559055 (1996-09-01), Chang et al.
patent: 5677243 (1997-10-01), Ohsaki
patent: 5705430 (1998-01-01), Avanzino et al.
patent: 5920790 (1999-07-01), Wetzel et al.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor devices having dual damas does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor devices having dual damas, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor devices having dual damas will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-994417