Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2008-05-06
2008-05-06
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S267000, C438S270000, C438S597000, C257SE21495
Reexamination Certificate
active
07368373
ABSTRACT:
A method for manufacturing a semiconductor device is disclosed suitable for a substrate having a first conducting structure and a first dielectric layer, wherein the dielectric layer covers the first conductive structure. The method includes the steps of forming a second conductive structure over the substrate adjacent to the first conductive structure. Then, the size of the second conductive structure is reduced so that a top surface of the second conductive structure is relatively lower than that of the first conductive structure. Thereafter, a second dielectric layer is formed over the substrate to cover the first and the second conductive structure. A via is formed in the second dielectric layer to expose the top surface of the first conductive structure. Finally, a via plug is formed in the via.
REFERENCES:
patent: 6531350 (2003-03-01), Satoh et al.
patent: 6656825 (2003-12-01), Burbach
patent: 6943082 (2005-09-01), Shibata
patent: 6967143 (2005-11-01), Mathew et al.
patent: 6972260 (2005-12-01), Huang et al.
patent: 7098124 (2006-08-01), Huang et al.
patent: 2003/0186552 (2003-10-01), Amano et al.
patent: 2005/0037585 (2005-02-01), Park et al.
Chen Dah-Chuan
Huang Min-San
Young Rex
Jianq Chyun IP Office
Lebentritt Michael
Powerchip Semiconductor Corp.
Roman Angel
LandOfFree
Method for manufacturing semiconductor devices and plug does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor devices and plug, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor devices and plug will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2803530