Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2008-02-21
2010-02-16
Young, Christopher G (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S030000, C430S313000, C430S314000, C430S315000, C430S316000
Reexamination Certificate
active
07662522
ABSTRACT:
A method for manufacturing a semiconductor device includes calculating a correction amount for correcting a dimension error generated in a pattern, by using an area and a total length of sides of a perimeter of the pattern included in each grid region of a plurality of mesh-like grid regions made by virtually dividing a pattern creation region of an exposure mask, exposing the pattern whose dimension has been corrected by the correction amount onto a substrate on which a resist film is coated, developing the resist film after the exposing, and processing the substrate by using a resist pattern after the developing.
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Emile Sahouria, et al., “Pattern based mask process correction - impact on data quality and mask writing time,” Proceedings of SPIE, vol. 5853, 2005, pp. 564-573.
Jens Schneider, et al., “Compensation of long-range process effects on photomasks by design data correction,” Proceedings of SPIE, vol. 4889, 2002, pp. 59-66.
NuFlare Technology, Inc.
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Young Christopher G
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