Method for manufacturing semiconductor devices and...

Details Method for manufacturing semiconductor devices and... Method for manufacturing semiconductor devices and...

2005-08-09

2005-08-09

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S003000, C438S575000, C438S650000

Reexamination Certificate

active

06927166

ABSTRACT:
A method of manufacturing a semiconductor device having a metal layer is provided in which variation of surface morphology resulting from thermal oxidation is suppressed. The metal layer is pretreated at a first temperature so that an upper surface of the metal layer is changed into a mixed phase of metal and oxygen and becomes substantially resistant to further oxidation during a subsequent heating at a higher temperature in an oxygen atmosphere.

REFERENCES:
patent: 5780115 (1998-07-01), Park et al.
patent: 5972722 (1999-10-01), Visokay et al.
patent: 6184073 (2001-02-01), Lage et al.
patent: 6204203 (2001-03-01), Narwankar et al.
patent: 6235572 (2001-05-01), Kunitomo et al.
patent: 6395053 (2002-05-01), Fau et al.
patent: 6399459 (2002-06-01), Al-Shareef et al.
patent: 6683001 (2004-01-01), Chung et al.
patent: 2003/0011961 (2003-01-01), Basceri et al.
patent: HEI 2000-208440 (2000-07-01), None
patent: 2000-044608 (2000-07-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor devices and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor devices and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor devices and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3498786