Method for manufacturing semiconductor devices

Details Method for manufacturing semiconductor devices Method for manufacturing semiconductor devices

1998-08-18

2000-06-06

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

134 2, 134 3, 252 793, 252 794, 438745, H01L 2100

Patent

active

060718277

ABSTRACT:
A method for manufacturing semiconductor devices including removing a photoresist and cleaning the substrate after removing the photoresist. The method for manufacturing semiconductor devices comprises removing the photoresist remaining on a semiconductor substrate using a dry etching process. The substrate is subsequently cleaned using a cleaning composition comprising a mixture of 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2.0 to 4.0 weight percent of hydrogen peroxide (H.sub.2 O.sub.2), 0.05 to 0.25 weight percent of hydrofluoric acid (HF), and the remaining weight percent of deionized water.

REFERENCES:
patent: 5164018 (1992-11-01), Barcelona
patent: 5783495 (1998-07-01), Li et al.

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