Method for manufacturing semiconductor device with uniform...

Details Method for manufacturing semiconductor device with uniform... Method for manufacturing semiconductor device with uniform...

2011-01-11

2011-01-11

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S259000, C438S270000

Reexamination Certificate

active

07867872

ABSTRACT:
A semiconductor device is manufactured by defining a groove in a semiconductor substrate, where the groove includes an upper portion and a lower portion, among other steps. A sacrificial layer is then formed to selectively fill the lower portion of the groove. Impurity ions are implanted into the semiconductor substrate while the lower portion of the groove is filled with the sacrificial layer. The sacrificial layer is then removed, and a gate is formed on the groove. In the method for manufacturing the semiconductor device, impurities can be doped at a uniform concentration in the channel area of the semiconductor device.

REFERENCES:
patent: 5998821 (1999-12-01), Hieda et al.
patent: 2008/0079068 (2008-04-01), Kim
patent: 1020060029871 (2006-03-01), None
patent: 1020060104086 (2006-10-01), None
patent: 1020070071697 (2007-07-01), None
patent: 1020070071698 (2007-07-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device with uniform... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device with uniform..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device with uniform... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2723002