Method for manufacturing semiconductor device with low electric

Details Method for manufacturing semiconductor device with low electric Method for manufacturing semiconductor device with low electric

1995-03-06

1997-09-09

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438659, 438660, 438664, 438682, 438683, H01L 2128

Patent

active

056656467

ABSTRACT:
In order to retrain from rising a temperature of a phase transition for a silicide of refractory metal, such as Ti, Co, Pt, Ni, Mo, W, Ta, or the like, a method for manufacturing a semiconductor device has a process of forming a low electric resistance layer on a surface of a silicon. The process comprises a step of forming, on the surface of the silicon, a layer of silicide of refractory metal with phase transition nuclei therein. The process further comprises a step of subjecting the silicide to phase transition by a phase transition heat treatment at a predetermined transition temperature to convert the silicide layer into a crystalline phase which has low electric resistance. Thereby the low electric resistance layer is formed. Preferably, the silicide of refractory metal with phase transition nuclei is amorphous or the silicide of refractory metal with phase transition nuclei is crystalline but has damages.

REFERENCES:
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4774201 (1988-09-01), Woo et al.
patent: 5302552 (1994-04-01), Duchateau et al.
S. Wolf "Silicon Processing for the VLSI Era, vol. 2", Lattice Press, pp. 144-146, 1990.
Zirinsky et al, "Oxidation Mechanisms in WSi.sub.2 thin Films," Appl. Phys. Lett., vol. 33, No. 1, 1 Jul. 1988, pp. 76-78.

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