Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-04-17
2007-04-17
Ahmed, Shamim (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S241000, C438S622000, C438S629000, C438S707000, C438S708000, C438S719000, C438S725000, C438S734000, C438S736000, C438S942000
Reexamination Certificate
active
10731931
ABSTRACT:
Methods for manufacturing semiconductor devices with contact bodies extended in a direction of a bit line to increase the contact area between a contact body and a storage electrode is provided. In one aspect a method includes forming gate lines on a semiconductor substrate, forming a first insulating layer to cover the gate lines, forming first contact pads and second contact pads, which are electrically connected to the semiconductor substrate between the gate lines, by penetrating the first insulating layer. Further, a second insulating layer is formed to cover the first contact pads and the second contact pads, and bit lines are formed across over the gate lines and are electrically connected to the second contact pads by penetrating the second insulating layer. In addition, a third insulating layer is formed to cover the bit lines and is selectively etched to form a band-type opening that crosses the bit lines and exposes the first contact pads.
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English Abstract.
Cho Han-ku
Lee Jung-hyeon
Park Chang-min
Park Joon-soo
Ahmed Shamim
F. Chau & Associates LLC
George Patricia A.
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