Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2005-04-26
2005-04-26
Pert, Evan (Department: 2829)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S487000
Reexamination Certificate
active
06884698
ABSTRACT:
A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable of promoting the crystallization of the amorphous silicon film by heating the amorphous silicon film, thereby crystallizing at least a part of the amorphous silicon film, and accelerating the crystallization by irradiating the silicon film with a laser beam or intense light equivalent thereto.
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Miyanaga Akiharu
Ohtani Hisashi
Yamaguchi Naoaki
Zhang Hongyong
Costellia Jeffrey L.
Nixon & Peabody LLP
Pert Evan
Semiconductor Energy Laboratory Co,. Ltd.
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