Method for manufacturing semiconductor device using polymer

Details Method for manufacturing semiconductor device using polymer Method for manufacturing semiconductor device using polymer

2006-08-29

2009-11-24

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S182000, C257S717000, C257SE21214

Reexamination Certificate

active

07622376

ABSTRACT:
A method for manufacturing a semiconductor device using a polymer is provided, wherein a first insulating layer is formed on a substrate, and a first photoresist pattern is formed over the first insulating layer. A polymer is formed around the first photoresist pattern, the polymer having an opening exposing a portion of the first insulating layer, the opening having a predetermined width, the first insulating layer is etched using the polymer as a mask to expose a portion of the substrate, and the first photoresist pattern and the polymer are removed. A gate insulating layer is formed on the exposed portion of the substrate, and a polysilicon layer is formed on the gate insulating layer and the etched first insulating layer. The polysilicon layer is planarized until the first insulating layer is exposed, to form a gate, and the exposed first insulating layer is removed.

REFERENCES:
patent: 6077733 (2000-06-01), Chen et al.
patent: 6897159 (2005-05-01), Lee et al.
Kim et al., Study on self-aligned contact oxide etching using C5F8/O2/Ar and C5F8/O2/Ar/CH2F2 plasma, Jun. 27, 2005, J. Vac. Sci. Technol. A 23(4), pp. 953-958.
Motomura et al., “Surface reaction processes in C4F8 and C5F8 plasmas for selective etching of SiO2 over photo-resist,” 2001, Thin Solid Films 390, pp. 134-138.

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