Method for manufacturing semiconductor device using...

Details Method for manufacturing semiconductor device using... Method for manufacturing semiconductor device using...

2011-03-22

2011-03-22

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Processing feature prior to imaging

C430S330000

Reexamination Certificate

active

07910291

ABSTRACT:
A method for manufacturing a semiconductor device using an immersion lithography process is disclosed. The immersion lithography process includes forming a photoresist film over an underlying layer of a semiconductor substrate; exposing the photoresist film to light without using an exposure mask; and performing an exposure process using an exposure mask. After exposure using the immersion lithography, a water mark generated from the exposure layer consumes a part of the acid of the exposure layer but the residual acid remains in the exposure layer to prevent generation of pattern defects such as T-top or pattern bridges.

REFERENCES:
patent: 2007/0048678 (2007-03-01), Chen et al.
patent: 1020060002229 (2006-01-01), None

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