Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2006-05-16
2006-05-16
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S108000, C438S109000, C438S110000, C438S455000, C438S977000, C257S686000, C257S697000, C257S778000
Reexamination Certificate
active
07045443
ABSTRACT:
A method is provided for manufacturing a semiconductor device, a semiconductor device, a circuit board, and an electronic apparatus. In such a semiconductor device, semiconductor chips can be readily aligned when they are stacked and terminals can be prevented from being short-circuited, thereby enhancing the reliability of the connection between electrodes of the semiconductor chips. According to the method, semiconductor chips are perforated, and a conductive material such as copper is filled into each perforation, thereby forming a terminal that contains the conductive material and has a recessed portion, disposed in the upper face thereof.
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Communication from Chinese Patent Office regarding a counterpart foreign application.
Harness & Dickey & Pierce P.L.C.
Jr. Carl Whitehead
Mitchell James M.
Seiko Epson Corporation
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