Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-07-10
2007-07-10
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S186000, C438S195000, C438S270000, C438S589000
Reexamination Certificate
active
11105587
ABSTRACT:
A method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a trench mask on an upper surface of a semiconductor substrate; forming the trench such that the trench having an aspect ratio equal to or larger than 2 and having a trench slanting angle equal to or larger than 80 degrees is formed; and removing a damage portion in such a manner that the damage portion disposed on an inner surface of the trench formed in the semiconductor substrate in the step of forming the trench is etched and removed in hydrogen atmosphere under decompression pressure at a temperature equal to or higher than 1600° C.
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Kimoto Tsunenobu
Malhan Rajesh Kumar
Matsunami Hiroyuki
Takeuchi Yuuichi
DENSO Corporation
Posz Law Group , PLC
Wilczewski M.
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