Method for manufacturing semiconductor device having porous...

Details Method for manufacturing semiconductor device having porous... Method for manufacturing semiconductor device having porous...

2007-12-28

2010-11-23

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S618000, C438S622000, C438S623000, C438S624000, C438S778000, C257S758000, C257S759000, C257SE21581

Reexamination Certificate

active

07838440

ABSTRACT:
The present invention related to a method for manufacturing a semiconductor device. More particularly, this method describes how to manufacture a semiconductor device having a porous, low dielectric constant layer formed between metal lines, comprising an insulation layer enveloping fillers.

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