Method for manufacturing semiconductor device having isolating g

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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29571, 29576W, 29580, 148187, 156646, 156648, 156649, 156651, 156653, 156657, 1566611, 156662, 357 49, H01L 21306, B44C 122, C03C 1500, C03C 2506

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046576304

ABSTRACT:
A semiconductor device having a LOCOS region formed on a Si substrate comprises a minute groove filled with non-oxidizable isolation film provided at the boundary between the LOCOS region and an IC area to be formed on the Si substrate. The non-oxidizable isolation film prevents the intrusion of thermal oxidation for the LOCOS region into the IC region, and is of silicon nitride 1000-10000 .ANG. width.
A method of manufacturing a semiconductor device having a LOCOS region formed on a Si substrate comprises the steps of depositing a silicon nitride film on the substrate; etching a minute width region at the boundary between an area to be the LOCOS region and an area to be an IC region on the substrate by anisotropic etching with a reactive ion etching mode, thereby to form a groove thereat thermal-oxidizing the Si substrate to form a thin SiO.sub.2 film on an area to be covered with silicon nitride; filling the groove with silicon nitride; thermal-oxidizing a part of the Si substrate other than the area covered with silicon nitride films formed previously; and removing the silicon nitride film deposited at the first step to flatten the surface of the Si substrate.

REFERENCES:
patent: 4433470 (1984-02-01), Kameyama et al.
patent: 4445967 (1984-05-01), Kameyama
Chiu et al., "A Bird's Beak Free Local Oxidation Technology Feasible for VLSI Circuits Fabrication", in IEEE Journal of Solid-State Circuits, vol. SC-17, No. 2 (Apr. 1982), pp. 166-170.

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